1223 lines
20 KiB
C
1223 lines
20 KiB
C
/**
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******************************************************************************
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* @file flash.c
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* @author Jerry Cai
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* @version
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* @date
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* @brief
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******************************************************************************
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* @attention
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*
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*
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******************************************************************************
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*/
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/* Includes ------------------------------------------------------------------*/
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#include "stm32f10x.h"
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#include "global.h"
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#include "string.h"
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//将数组绝对定位到MCU内部FLASH地址
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//考虑兼容32K FLASH,
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uint8_t const dataFlashA[2048] __attribute__((at(FLASH_DATA_A_BASE))) =
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{
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/***** AFE设置参数 26Byte *****/
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0x01, //5~16串存于此，其他串数(4/17~20串)存于paraMem.ee_sconf4
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0x1E, //过放只关放电MOS,防止过放无法充电
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0x6F, //
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0x20, //过压保护电压 0x320*5=4000mV
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0x63, //
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0x0C, //过压保护释放 0x30C*5=3900mV
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0x64, //欠压保护电压 0x64*20=2000mV
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0x69, //欠压保护释放 0x69*20=2100mV
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0xAF, //平衡开启电压 0xAF*20=3500mV
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0x78, //预充开启电压 0x78*20=2400mV
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0x4B, //低压禁止充电 0x4B*20=1500mV
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0xFA, //异常高压保护 0xFA*20=5000mV
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0x18, //放电过流1保护 30mV 4S
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0x1b, //放电过流2保护 40mV 2S
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0x10, //短路保护 40mV 0uS
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0x1A, //充电过流保护 30mV 1S
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0x50, //
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0x64, //充电过温保护 100
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0x46, //充电过温释放 70
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0xEC, //充电低温保护 -20
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0xF6, //充电低温释放 -10
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0x64, //放电过温保护 100
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0x46, //放电过温释放 70
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0xEC, //放电低温保护 -20
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0xF6, //放电低温释放 -10
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0xF4, //校验值(每次修改注意更新)
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/***** MCU保护参数 26Byte *****/
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//20230221
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0x3C, //充电高温保护 60
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0x37, //充电高温释放 55
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0x00, //充电低温保护 0
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0x05, //充电低温释放 5
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0x41, //放电高温保护 65
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0x3C, //放电高温释放 60
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0xEC, //放电低温保护 -20
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0xF1, //放电低温释放 -15
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0xCD, //充电过流保护 205A
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0xCD, //放电过流保护 205A
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0x01, //充电过流时间 1S
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0x01, //放电过流时间 1S
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0x1E, //过流恢复时间 30S
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0xB0, //校验值(每次修改注意更新)
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//20230614
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0xC8, //限流启动电流 200A
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0x05, //限流延时时间 5S
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0x3C, //限流释放时间 0x003c=60S
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0x00, //
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//20230705
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0x16, //逆变器充电电压限制 0x0316*0.1=79.0V
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0x03, //
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0x9A, //逆变器放电电压限制 0x019A*0.1=41.0V = 总体欠压告警41.0V
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0x01, //
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0x78, //逆变器充电电流限制 0x0578*0.1=140A = 充电过流告警150-10
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0x05, //
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0xDC, //逆变器放电电流限制 0x05DC*0.1=150A = 放电过流告警160-10
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0x05, //
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/***** Para过程参数 128Byte *****/
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//20240419
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0x32, //主动均衡开启压差 50mV
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0x1E, //主动均衡释放压差 30mV
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0x58, //主动均衡释放延时 0x0258=600S
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0x02, //
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//20240821
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0x5A, //累积容量转换比 90%
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0x46, //最低健康系数 70%
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0xC8, //100%对应的最大循环次数 0x00C8=200次
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0x00, //
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0x70, //最大循环次数 6000次
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0x17, //
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//20241024
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0x3C, //浪涌短路消失且预充完成后，对下一次短路的等待时间 60s
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0x05, //浪涌短路的最大持续出现次数 5次
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//20260402
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0x01, //开机预充延时 1s
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0x02, //开放电MOS前预充延时 2s
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0x0A, //预充时的真短路判断电压 10V
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0x04, //浪涌短路时的真短路判断电压 4V
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//20250313
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0xE0, //启用请求标志的标志 bit7充电允许 bit6放电允许 bit5强充
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0x00, //
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0x64, //禁充开启SOC 100%
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0x63, //禁充释放SOC 99%
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0x0A, //禁放开启SOC 10%
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0x14, //禁放释放SOC 20%
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0x0A, //强充开启SOC 10%
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0x14, //强充释放SOC 20%
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//20250402
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0x0F, //满充方式使能 单芯过压√ 总体过压√ 逆变器限压+2A小电流√ 满充电压+截止电流√
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0x32, //截止电流 0x32=5.0A
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0x20, //满充电压 0x0320=80.0V
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0x03, //
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0x00, //rsvd0[0]
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0x00, //rsvd0[1]
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0x00, //rsvd0[2]
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0x00, //rsvd0[3]
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//20240513
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0xA0, //休眠时间(bit0~14) 0x05A0=1440min=24h
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0x05, //休眠启用(bit15) 0
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//20240924
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0x00, //地址手动控制不启用(bit0) 0
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0x00, //
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//20241023
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0x00, //充放启用控制
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0x00, //bit0关放电MOS 0 bit1关充电MOS 0 bit2关预充 0
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0xD0, //满充容量校准时间(bit0~14) 0x02D0=720min=12h
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0x82, //充电校准满充容量不启用(bit15) 1
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//20250402
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0x01, //休眠2时间(bit0~14) 0x0001=1min
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0x00, //休眠2启用(bit15) 0
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0x60, //休眠2电压(bit0~15) 0x960=2400mV
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0x09, //
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//20250410
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0xF0, //定时校准soc时间(bit0-14) 0x00F0=240min=4h
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0x80, //开路电压定时校准soc禁用(bit15) 1
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0x0A, //±10%范围外
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0x0A, //±10℃范围内
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//20260309
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0x00, //bit0~4 温度只测不保护禁用
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0x00, //
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0x00, //rsvd1[0]
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0x00, //rsvd1[1]
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0x00, //rsvd1[2]
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0x00, //rsvd1[3]
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0x00, //rsvd1[4]
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0x00, //rsvd1[5]
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0x00, //rsvd1[6]
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0x00, //rsvd1[7]
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0x00, //rsvd1[8]
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0x00, //rsvd1[9]
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0x00, //rsvd1[10]
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0x00, //rsvd1[11]
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0x00, //rsvd1[12]
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0x00, //rsvd1[13]
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//20250404
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0x20, //总体过压保护电压 0x0320*0.1=80.0V
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0x03, //
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0x0C, //总体过压保护释放电压 0x030C*0.1=78.0V
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0x03, //
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0x90, //总体欠压保护电压 0x0190*0.1=40.0V
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0x01, //
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0xA4, //总体欠压保护释放电压 0x01A4*0.1=42.0V
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0x01, //
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0x01, //总体过压保护延时 1s
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0x01, //总体欠压保护延时 1s
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0x1C, //放电过流2 540A
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0x02, //
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0x04, //放电过流2延时 4*10ms
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0x00, //
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0x46, //环境充电高温 70
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0x41, //环境充电高温释放 65
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0xEC, //环境充电低温 -20
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0xF1, //环境充电低温释放 -15
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0x46, //环境放电高温 70
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0x41, //环境放电高温释放 65
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0xEC, //环境放电低温 -20
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0xF1, //环境放电低温释放 -15
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0x60, //单体过压释放SOC
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0x60, //总体过压释放SOC
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0x10, //并机总数 16台
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0x00, //rsvd2[0]
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0x00, //rsvd2[1]
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0x00, //rsvd2[2]
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0x00, //rsvd2[3]
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//20260722
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0x14, //SH36735XX系列SCONF4寄存器串数配置(20串)
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//20260716
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0x12, //短路计算倍数 18
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0x01, //1=SH36735xx系列 0=SH367309
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//20250408
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0x6E, //单体过压告警 0x0F6E=3950mV
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0x0F, //
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0x02, //单体欠压告警 0x0802=2050mV
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0x08, //
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0x16, //总体过压告警 0x0316=79.0V
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0x03, //
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0x9A, //总体欠压告警 0x019A=41.0V
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0x01, //
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0x96, //充电过流告警 0x96=150A
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0xA0, //放电过流1告警 0xA0=160A
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0x37, //电芯充电高温告警 55
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0x05, //电芯充电低温告警 5
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0x3C, //电芯放电高温告警 60
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0xF1, //电芯放电低温告警 -15
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0x41, //环境充电高温告警 65
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0xF1, //环境充电低温告警 -15
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0x41, //环境放电高温告警 65
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0xF1, //环境放电低温告警 -15
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0x5F, //MOS充电高温告警 95
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0xF1, //MOS充电低温告警 -15
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0x5F, //MOS放电高温告警 95
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0xF1, //MOS放电低温告警 -15
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0x00, //rsvd3[0]
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0x00, //rsvd3[1]
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0x00, //rsvd3[2]
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0x00, //rsvd3[3]
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0x00, //rsvd3[4]
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0x00, //rsvd3[5]
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0x00, //rsvd3[6]
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0x00, //rsvd3[7]
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0x00, //rsvd3[8]
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0x00, //rsvd3[9]
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0x49, //OCV放电曲线 2889
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0x0B, //
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0x86, //3206
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0x0C, //
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0x91, //3217
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0x0C, //
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0xB1, //3249
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0x0C, //
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0xC7, //3271
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0x0C, //
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0xDA, //3290
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0x0C, //
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0xDB, //3291
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0x0C, //
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0xDE, //3294
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0x0C, //
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0x02, //3330
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0x0D, //
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0x03, //3331
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0x0D, //
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0x03, //3331
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0x0D, //
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0x04, //3332
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0x0D, //
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0x05, //3333
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0x0D, //
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0x07, //3335
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0x0D, //
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0x47, //3399
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0x0D, //
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0x00, //rsvd4[0]
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0x00, //rsvd4[1]
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0xF1, //OCV充电曲线 3057
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0x0B, //
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0x95, //3221
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0x0C, //
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0x9D, //3229
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0x0C, //
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0xBE, //3262
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0x0C, //
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0xD7, //3287
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0x0C, //
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0xE7, //3303
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0x0C, //
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0xE8, //3304
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0x0C, //
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0xEA, //3306
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0x0C, //
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0x0B, //3339
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0x0D, //
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0x0C, //3340
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0x0D, //
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0x0C, //3340
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0x0D, //
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0x0B, //3339
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0x0D, //
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0x0D, //3341
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0x0D, //
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0x0C, //3340
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0x0D, //
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0x47, //3399
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0x0D, //
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0x00, //rsvd5[0]
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0x00, //rsvd5[1]
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#if LTE_Conn
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/***** 4G平台设备参数 共42+2+42+42+23+1+8=160Byte *****/
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//域名 42Byte
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0x00, //0
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0x00, //1
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0x00, //2
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0x00, //3
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0x00, //4
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0x00, //5
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0x00, //6
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0x00, //7
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0x00, //8
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0x00, //9
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0x00, //10
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0x00, //11
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0x00, //12
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0x00, //13
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0x00, //14
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0x00, //15
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0x00, //16
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0x00, //17
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0x00, //18
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0x00, //19
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0x00, //20
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0x00, //21
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0x00, //22
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0x00, //23
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0x00, //24
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0x00, //25
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0x00, //26
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0x00, //27
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0x00, //28
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0x00, //29
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0x00, //30
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0x00, //31
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0x00, //32
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0x00, //33
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0x00, //34
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0x00, //35
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0x00, //36
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0x00, //37
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0x00, //38
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0x00, //39
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0x00, //40
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0x00, //41
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//端口 2Byte
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0x00, //
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0x00, //
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//用户名 42Byte
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0x00, //0
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0x00, //1
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0x00, //2
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0x00, //3
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0x00, //4
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0x00, //5
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0x00, //6
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0x00, //7
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0x00, //8
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0x00, //9
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0x00, //10
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0x00, //11
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0x00, //12
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0x00, //13
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0x00, //14
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0x00, //15
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0x00, //16
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0x00, //17
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0x00, //18
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0x00, //19
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0x00, //20
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0x00, //21
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0x00, //22
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0x00, //23
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0x00, //24
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0x00, //25
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0x00, //26
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0x00, //27
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0x00, //28
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0x00, //29
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0x00, //30
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0x00, //31
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0x00, //32
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0x00, //33
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0x00, //34
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0x00, //35
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0x00, //36
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0x00, //37
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0x00, //38
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0x00, //39
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0x00, //40
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0x00, //41
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//密码 42Byte
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0x00, //0
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0x00, //1
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0x00, //2
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0x00, //3
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0x00, //4
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0x00, //5
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0x00, //6
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0x00, //7
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0x00, //8
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0x00, //9
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0x00, //10
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0x00, //11
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0x00, //12
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0x00, //13
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0x00, //14
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0x00, //15
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0x00, //16
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0x00, //17
|
|
0x00, //18
|
|
0x00, //19
|
|
|
|
0x00, //20
|
|
0x00, //21
|
|
0x00, //22
|
|
0x00, //23
|
|
|
|
0x00, //24
|
|
0x00, //25
|
|
0x00, //26
|
|
0x00, //27
|
|
|
|
0x00, //28
|
|
0x00, //29
|
|
0x00, //30
|
|
0x00, //31
|
|
|
|
0x00, //32
|
|
0x00, //33
|
|
0x00, //34
|
|
0x00, //35
|
|
|
|
0x00, //36
|
|
0x00, //37
|
|
0x00, //38
|
|
0x00, //39
|
|
|
|
0x00, //40
|
|
0x00, //41
|
|
|
|
//ClientID 23Byte 和SN号同步，所以不填
|
|
0x00, //0
|
|
0x00, //1
|
|
0x00, //2
|
|
|
|
0x00, //3
|
|
0x00, //4
|
|
0x00, //5
|
|
0x00, //6
|
|
|
|
0x00, //7
|
|
0x00, //8
|
|
0x00, //9
|
|
0x00, //10
|
|
|
|
0x00, //11
|
|
0x00, //12
|
|
0x00, //13
|
|
0x00, //14
|
|
|
|
0x00, //15
|
|
0x00, //16
|
|
0x00, //17
|
|
0x00, //18
|
|
|
|
0x00, //19
|
|
0x00, //20
|
|
0x00, //21
|
|
0x00, //22
|
|
0x00, //23
|
|
0x00, //24
|
|
|
|
0x00, //CRC校验码(153个0x00的校验码是0)
|
|
|
|
//(预留目前不用)
|
|
0x00, //
|
|
0x00, //
|
|
0x00, //
|
|
0x00, //
|
|
0x00, //
|
|
0x00, //
|
|
#endif
|
|
|
|
};
|
|
|
|
uint8_t const dataFlashB[2048] __attribute__((at(FLASH_DATA_B_BASE))) =
|
|
{
|
|
/***** AFE设置参数 26Byte *****/
|
|
0x01, //5~16串存于此，其他串数(4/17~20串)存于paraMem.ee_sconf4
|
|
0x1E, //过放只关放电MOS,防止过放无法充电
|
|
0x6F, //
|
|
0x20, //过压保护电压 0x320*5=4000mV
|
|
0x63, //
|
|
0x0C, //过压保护释放 0x30C*5=3900mV
|
|
0x64, //欠压保护电压 0x64*20=2000mV
|
|
0x69, //欠压保护释放 0x69*20=2100mV
|
|
0xAF, //平衡开启电压 0xAF*20=3500mV
|
|
0x78, //预充开启电压 0x78*20=2400mV
|
|
0x4B, //低压禁止充电 0x4B*20=1500mV
|
|
0xFA, //异常高压保护 0xFA*20=5000mV
|
|
0x18, //放电过流1保护 30mV 4S
|
|
0x1b, //放电过流2保护 40mV 2S
|
|
0x10, //短路保护 40mV 0uS
|
|
0x1A, //充电过流保护 30mV 1S
|
|
0x50, //
|
|
0x64, //充电过温保护 100
|
|
0x46, //充电过温释放 70
|
|
0xEC, //充电低温保护 -20
|
|
0xF6, //充电低温释放 -10
|
|
0x64, //放电过温保护 100
|
|
0x46, //放电过温释放 70
|
|
0xEC, //放电低温保护 -20
|
|
0xF6, //放电低温释放 -10
|
|
0xF4, //校验值(每次修改注意更新)
|
|
|
|
/***** MCU保护参数 26Byte *****/
|
|
//20230221
|
|
0x3C, //充电高温保护 60
|
|
0x37, //充电高温释放 55
|
|
0x00, //充电低温保护 0
|
|
0x05, //充电低温释放 5
|
|
0x41, //放电高温保护 65
|
|
0x3C, //放电高温释放 60
|
|
0xEC, //放电低温保护 -20
|
|
0xF1, //放电低温释放 -15
|
|
|
|
0xCD, //充电过流保护 205A
|
|
0xCD, //放电过流保护 205A
|
|
0x01, //充电过流时间 1S
|
|
0x01, //放电过流时间 1S
|
|
0x1E, //过流恢复时间 30S
|
|
0xB0, //校验值(每次修改注意更新)
|
|
|
|
//20230614
|
|
0xC8, //限流启动电流 200A
|
|
0x05, //限流延时时间 5S
|
|
0x3C, //限流释放时间 0x003c=60S
|
|
0x00, //
|
|
|
|
//20230705
|
|
0x16, //逆变器充电电压限制 0x0316*0.1=79.0V
|
|
0x03, //
|
|
0x9A, //逆变器放电电压限制 0x019A*0.1=41.0V = 总体欠压告警41.0V
|
|
0x01, //
|
|
0x78, //逆变器充电电流限制 0x0578*0.1=140A = 充电过流告警150-10
|
|
0x05, //
|
|
0xDC, //逆变器放电电流限制 0x05DC*0.1=150A = 放电过流告警160-10
|
|
0x05, //
|
|
|
|
/***** Para过程参数 128Byte *****/
|
|
//20240419
|
|
0x32, //主动均衡开启压差 50mV
|
|
0x1E, //主动均衡释放压差 30mV
|
|
0x58, //主动均衡释放延时 0x0258=600S
|
|
0x02, //
|
|
|
|
//20240821
|
|
0x5A, //累积容量转换比 90%
|
|
0x46, //最低健康系数 70%
|
|
0xC8, //100%对应的最大循环次数 0x00C8=200次
|
|
0x00, //
|
|
0x70, //最大循环次数 6000次
|
|
0x17, //
|
|
|
|
//20241024
|
|
0x3C, //浪涌短路消失且预充完成后，对下一次短路的等待时间 60s
|
|
0x05, //浪涌短路的最大持续出现次数 5次
|
|
|
|
//20260402
|
|
0x01, //开机预充延时 1s
|
|
0x02, //开放电MOS前预充延时 2s
|
|
0x0A, //预充时的真短路判断电压 10V
|
|
0x04, //浪涌短路时的真短路判断电压 4V
|
|
|
|
//20250313
|
|
0xE0, //启用请求标志的标志 bit7充电允许 bit6放电允许 bit5强充
|
|
0x00, //
|
|
0x64, //禁充开启SOC 100%
|
|
0x63, //禁充释放SOC 99%
|
|
0x0A, //禁放开启SOC 10%
|
|
0x14, //禁放释放SOC 20%
|
|
0x0A, //强充开启SOC 10%
|
|
0x14, //强充释放SOC 20%
|
|
|
|
//20250402
|
|
0x0F, //满充方式使能 单芯过压√ 总体过压√ 逆变器限压+2A小电流√ 满充电压+截止电流√
|
|
0x32, //截止电流 0x32=5.0A
|
|
0x20, //满充电压 0x0320=80.0V
|
|
0x03, //
|
|
|
|
0x00, //rsvd0[0]
|
|
0x00, //rsvd0[1]
|
|
0x00, //rsvd0[2]
|
|
0x00, //rsvd0[3]
|
|
|
|
//20240513
|
|
0xA0, //休眠时间(bit0~14) 0x05A0=1440min=24h
|
|
0x05, //休眠启用(bit15) 0
|
|
|
|
//20240924
|
|
0x00, //地址手动控制不启用(bit0) 0
|
|
0x00, //
|
|
|
|
//20241023
|
|
0x00, //充放启用控制
|
|
0x00, //bit0关放电MOS 0 bit1关充电MOS 0 bit2关预充 0
|
|
|
|
0xD0, //满充容量校准时间(bit0~14) 0x02D0=720min=12h
|
|
0x82, //充电校准满充容量不启用(bit15) 1
|
|
|
|
//20250402
|
|
0x01, //休眠2时间(bit0~14) 0x0001=1min
|
|
0x00, //休眠2启用(bit15) 0
|
|
0x60, //休眠2电压(bit0~15) 0x960=2400mV
|
|
0x09, //
|
|
|
|
//20250410
|
|
0xF0, //定时校准soc时间(bit0-14) 0x00F0=240min=4h
|
|
0x80, //开路电压定时校准soc禁用(bit15) 1
|
|
0x0A, //±10%范围外
|
|
0x0A, //±10℃范围内
|
|
|
|
//20260309
|
|
0x00, //bit0~4 温度只测不保护禁用
|
|
0x00, //
|
|
|
|
0x00, //rsvd1[0]
|
|
0x00, //rsvd1[1]
|
|
0x00, //rsvd1[2]
|
|
0x00, //rsvd1[3]
|
|
0x00, //rsvd1[4]
|
|
0x00, //rsvd1[5]
|
|
0x00, //rsvd1[6]
|
|
0x00, //rsvd1[7]
|
|
0x00, //rsvd1[8]
|
|
0x00, //rsvd1[9]
|
|
0x00, //rsvd1[10]
|
|
0x00, //rsvd1[11]
|
|
0x00, //rsvd1[12]
|
|
0x00, //rsvd1[13]
|
|
|
|
//20250404
|
|
0x20, //总体过压保护电压 0x0320*0.1=80.0V
|
|
0x03, //
|
|
0x0C, //总体过压保护释放电压 0x030C*0.1=78.0V
|
|
0x03, //
|
|
0x90, //总体欠压保护电压 0x0190*0.1=40.0V
|
|
0x01, //
|
|
0xA4, //总体欠压保护释放电压 0x01A4*0.1=42.0V
|
|
0x01, //
|
|
0x01, //总体过压保护延时 1s
|
|
0x01, //总体欠压保护延时 1s
|
|
|
|
0x1C, //放电过流2 540A
|
|
0x02, //
|
|
0x04, //放电过流2延时 4*10ms
|
|
0x00, //
|
|
|
|
0x46, //环境充电高温 70
|
|
0x41, //环境充电高温释放 65
|
|
0xEC, //环境充电低温 -20
|
|
0xF1, //环境充电低温释放 -15
|
|
0x46, //环境放电高温 70
|
|
0x41, //环境放电高温释放 65
|
|
0xEC, //环境放电低温 -20
|
|
0xF1, //环境放电低温释放 -15
|
|
|
|
0x60, //单体过压释放SOC
|
|
0x60, //总体过压释放SOC
|
|
|
|
0x10, //并机总数 16台
|
|
|
|
0x00, //rsvd2[0]
|
|
0x00, //rsvd2[1]
|
|
0x00, //rsvd2[2]
|
|
0x00, //rsvd2[3]
|
|
|
|
//20260722
|
|
0x14, //SH36735XX系列SCONF4寄存器串数配置(20串)
|
|
|
|
//20260716
|
|
0x12, //短路计算倍数 18
|
|
0x01, //1=SH36735xx系列 0=SH367309
|
|
|
|
//20250408
|
|
0x6E, //单体过压告警 0x0F6E=3950mV
|
|
0x0F, //
|
|
0x02, //单体欠压告警 0x0802=2050mV
|
|
0x08, //
|
|
0x16, //总体过压告警 0x0316=79.0V
|
|
0x03, //
|
|
0x9A, //总体欠压告警 0x019A=41.0V
|
|
0x01, //
|
|
|
|
0x96, //充电过流告警 0x96=150A
|
|
0xA0, //放电过流1告警 0xA0=160A
|
|
|
|
0x37, //电芯充电高温告警 55
|
|
0x05, //电芯充电低温告警 5
|
|
0x3C, //电芯放电高温告警 60
|
|
0xF1, //电芯放电低温告警 -15
|
|
|
|
0x41, //环境充电高温告警 65
|
|
0xF1, //环境充电低温告警 -15
|
|
0x41, //环境放电高温告警 65
|
|
0xF1, //环境放电低温告警 -15
|
|
|
|
0x5F, //MOS充电高温告警 95
|
|
0xF1, //MOS充电低温告警 -15
|
|
0x5F, //MOS放电高温告警 95
|
|
0xF1, //MOS放电低温告警 -15
|
|
|
|
0x00, //rsvd3[0]
|
|
0x00, //rsvd3[1]
|
|
0x00, //rsvd3[2]
|
|
0x00, //rsvd3[3]
|
|
0x00, //rsvd3[4]
|
|
0x00, //rsvd3[5]
|
|
0x00, //rsvd3[6]
|
|
0x00, //rsvd3[7]
|
|
0x00, //rsvd3[8]
|
|
0x00, //rsvd3[9]
|
|
|
|
0x49, //OCV放电曲线 2889
|
|
0x0B, //
|
|
0x86, //3206
|
|
0x0C, //
|
|
0x91, //3217
|
|
0x0C, //
|
|
0xB1, //3249
|
|
0x0C, //
|
|
0xC7, //3271
|
|
0x0C, //
|
|
0xDA, //3290
|
|
0x0C, //
|
|
0xDB, //3291
|
|
0x0C, //
|
|
0xDE, //3294
|
|
0x0C, //
|
|
0x02, //3330
|
|
0x0D, //
|
|
0x03, //3331
|
|
0x0D, //
|
|
0x03, //3331
|
|
0x0D, //
|
|
0x04, //3332
|
|
0x0D, //
|
|
0x05, //3333
|
|
0x0D, //
|
|
0x07, //3335
|
|
0x0D, //
|
|
0x47, //3399
|
|
0x0D, //
|
|
|
|
0x00, //rsvd4[0]
|
|
0x00, //rsvd4[1]
|
|
|
|
0xF1, //OCV充电曲线 3057
|
|
0x0B, //
|
|
0x95, //3221
|
|
0x0C, //
|
|
0x9D, //3229
|
|
0x0C, //
|
|
0xBE, //3262
|
|
0x0C, //
|
|
0xD7, //3287
|
|
0x0C, //
|
|
0xE7, //3303
|
|
0x0C, //
|
|
0xE8, //3304
|
|
0x0C, //
|
|
0xEA, //3306
|
|
0x0C, //
|
|
0x0B, //3339
|
|
0x0D, //
|
|
0x0C, //3340
|
|
0x0D, //
|
|
0x0C, //3340
|
|
0x0D, //
|
|
0x0B, //3339
|
|
0x0D, //
|
|
0x0D, //3341
|
|
0x0D, //
|
|
0x0C, //3340
|
|
0x0D, //
|
|
0x47, //3399
|
|
0x0D, //
|
|
|
|
0x00, //rsvd5[0]
|
|
0x00, //rsvd5[1]
|
|
|
|
|
|
#if LTE_Conn
|
|
/***** 4G平台设备参数 共42+2+42+42+23+1+8=160Byte *****/
|
|
//域名 42Byte
|
|
0x00, //0
|
|
0x00, //1
|
|
0x00, //2
|
|
0x00, //3
|
|
|
|
0x00, //4
|
|
0x00, //5
|
|
0x00, //6
|
|
0x00, //7
|
|
|
|
0x00, //8
|
|
0x00, //9
|
|
0x00, //10
|
|
0x00, //11
|
|
|
|
0x00, //12
|
|
0x00, //13
|
|
0x00, //14
|
|
0x00, //15
|
|
|
|
0x00, //16
|
|
0x00, //17
|
|
0x00, //18
|
|
0x00, //19
|
|
|
|
0x00, //20
|
|
0x00, //21
|
|
0x00, //22
|
|
0x00, //23
|
|
|
|
0x00, //24
|
|
0x00, //25
|
|
0x00, //26
|
|
0x00, //27
|
|
|
|
0x00, //28
|
|
0x00, //29
|
|
0x00, //30
|
|
0x00, //31
|
|
|
|
0x00, //32
|
|
0x00, //33
|
|
0x00, //34
|
|
0x00, //35
|
|
|
|
0x00, //36
|
|
0x00, //37
|
|
0x00, //38
|
|
0x00, //39
|
|
|
|
0x00, //40
|
|
0x00, //41
|
|
|
|
|
|
//端口 2Byte
|
|
0x00, //
|
|
0x00, //
|
|
|
|
|
|
//用户名 42Byte
|
|
0x00, //0
|
|
0x00, //1
|
|
0x00, //2
|
|
0x00, //3
|
|
|
|
0x00, //4
|
|
0x00, //5
|
|
0x00, //6
|
|
0x00, //7
|
|
|
|
0x00, //8
|
|
0x00, //9
|
|
0x00, //10
|
|
0x00, //11
|
|
|
|
0x00, //12
|
|
0x00, //13
|
|
0x00, //14
|
|
0x00, //15
|
|
|
|
0x00, //16
|
|
0x00, //17
|
|
0x00, //18
|
|
0x00, //19
|
|
|
|
0x00, //20
|
|
0x00, //21
|
|
0x00, //22
|
|
0x00, //23
|
|
|
|
0x00, //24
|
|
0x00, //25
|
|
0x00, //26
|
|
0x00, //27
|
|
|
|
0x00, //28
|
|
0x00, //29
|
|
0x00, //30
|
|
0x00, //31
|
|
|
|
0x00, //32
|
|
0x00, //33
|
|
0x00, //34
|
|
0x00, //35
|
|
|
|
0x00, //36
|
|
0x00, //37
|
|
0x00, //38
|
|
0x00, //39
|
|
|
|
0x00, //40
|
|
0x00, //41
|
|
|
|
|
|
//密码 42Byte
|
|
0x00, //0
|
|
0x00, //1
|
|
0x00, //2
|
|
0x00, //3
|
|
|
|
0x00, //4
|
|
0x00, //5
|
|
0x00, //6
|
|
0x00, //7
|
|
|
|
0x00, //8
|
|
0x00, //9
|
|
0x00, //10
|
|
0x00, //11
|
|
|
|
0x00, //12
|
|
0x00, //13
|
|
0x00, //14
|
|
0x00, //15
|
|
|
|
0x00, //16
|
|
0x00, //17
|
|
0x00, //18
|
|
0x00, //19
|
|
|
|
0x00, //20
|
|
0x00, //21
|
|
0x00, //22
|
|
0x00, //23
|
|
|
|
0x00, //24
|
|
0x00, //25
|
|
0x00, //26
|
|
0x00, //27
|
|
|
|
0x00, //28
|
|
0x00, //29
|
|
0x00, //30
|
|
0x00, //31
|
|
|
|
0x00, //32
|
|
0x00, //33
|
|
0x00, //34
|
|
0x00, //35
|
|
|
|
0x00, //36
|
|
0x00, //37
|
|
0x00, //38
|
|
0x00, //39
|
|
|
|
0x00, //40
|
|
0x00, //41
|
|
|
|
//ClientID 23Byte 和SN号同步，所以不填
|
|
0x00, //0
|
|
0x00, //1
|
|
0x00, //2
|
|
|
|
0x00, //3
|
|
0x00, //4
|
|
0x00, //5
|
|
0x00, //6
|
|
|
|
0x00, //7
|
|
0x00, //8
|
|
0x00, //9
|
|
0x00, //10
|
|
|
|
0x00, //11
|
|
0x00, //12
|
|
0x00, //13
|
|
0x00, //14
|
|
|
|
0x00, //15
|
|
0x00, //16
|
|
0x00, //17
|
|
0x00, //18
|
|
|
|
0x00, //19
|
|
0x00, //20
|
|
0x00, //21
|
|
0x00, //22
|
|
0x00, //23
|
|
0x00, //24
|
|
|
|
0x00, //CRC校验码(153个0x00的校验码是0)
|
|
|
|
//(预留目前不用)
|
|
0x00, //
|
|
0x00, //
|
|
0x00, //
|
|
0x00, //
|
|
0x00, //
|
|
0x00, //
|
|
#endif
|
|
|
|
};
|
|
|
|
//FLASH指定地址连续写入num HALFWORD数据
|
|
void FLASH_WrData(uint32_t addr, uint16_t *data, uint16_t num)
|
|
{
|
|
uint16_t sign;
|
|
uint16_t i;
|
|
|
|
FLASH_Unlock();
|
|
FLASH_ClearFlag(FLASH_FLAG_BSY | FLASH_FLAG_EOP |FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);
|
|
sign = FLASH_ErasePage(addr);
|
|
if(sign == FLASH_COMPLETE)
|
|
{
|
|
for(i=0; i<num; i++)
|
|
{
|
|
FLASH_ProgramHalfWord(addr+i*2, data[i]);
|
|
}
|
|
}
|
|
FLASH_Lock();
|
|
}
|
|
|
|
//按字节读取num长度数据
|
|
void FLASH_RdDataByte(uint32_t addr, uint8_t *data, uint16_t num)
|
|
{
|
|
uint16_t i;
|
|
|
|
for(i=0; i<num; i++)
|
|
{
|
|
data[i] = *(uint8_t *)(addr+i);
|
|
}
|
|
}
|
|
|
|
//读bmsMem和paraMem和4G凭证更新到FLASH对应位置
|
|
uint8_t MEMORY_UpdateFlash(uint32_t addr)
|
|
{
|
|
uint8_t temp[AFE_MCU_LEN+PARAMEM_LEN+HOSTMEM_LEN];
|
|
|
|
memcpy(temp, &bmsMem.ee_sconf1, AFE_MCU_LEN);
|
|
memcpy(&temp[AFE_MCU_LEN], ¶Mem.act_bal_startV, PARAMEM_LEN);
|
|
|
|
FLASH_WrData(addr, (uint16_t *)temp, AFE_MCU_LEN/2+PARAMEM_LEN/2); //按半字写入FLASH
|
|
FLASH_RdDataByte(addr, temp, AFE_MCU_LEN+PARAMEM_LEN); //读并校验
|
|
|
|
if(temp[25] == CRC8_Cal(&temp[0],25) && temp[39] == CRC8_Cal(&temp[26], 13))
|
|
{
|
|
#if LTE_Conn
|
|
memcpy(&temp[AFE_MCU_LEN+PARAMEM_LEN], &VersionMem.host[0], HOSTMEM_LEN);
|
|
FLASH_WrData(addr, (uint16_t *)temp, AFE_MCU_LEN/2+PARAMEM_LEN/2+HOSTMEM_LEN/2); //按半字写入FLASH
|
|
FLASH_RdDataByte(addr, temp, AFE_MCU_LEN+PARAMEM_LEN+HOSTMEM_LEN); //读并校验
|
|
|
|
if(temp[AFE_MCU_LEN+PARAMEM_LEN+153] != CRC8_Cal(&temp[AFE_MCU_LEN+PARAMEM_LEN], 153))
|
|
{
|
|
return 1;
|
|
}
|
|
else
|
|
#endif
|
|
{
|
|
return 0;
|
|
}
|
|
}
|
|
else
|
|
{
|
|
return 1;
|
|
}
|
|
}
|
|
|
|
//读FLASH更新到bmsMem和paraMem对应位置
|
|
uint8_t FLASH_ReadCheck(uint32_t addr)
|
|
{
|
|
uint8_t temp[AFE_MCU_LEN+PARAMEM_LEN+HOSTMEM_LEN];
|
|
|
|
FLASH_RdDataByte(addr, temp, AFE_MCU_LEN+PARAMEM_LEN+HOSTMEM_LEN); //读并校验
|
|
|
|
if(temp[25] == CRC8_Cal(&temp[0],25) && temp[39] == CRC8_Cal(&temp[26], 13))
|
|
{
|
|
memcpy(&bmsMem.ee_sconf1, temp, AFE_MCU_LEN);
|
|
memcpy(¶Mem.act_bal_startV, &temp[AFE_MCU_LEN], PARAMEM_LEN);
|
|
|
|
#if LTE_Conn
|
|
FLASH_RdDataByte(addr, temp, AFE_MCU_LEN+PARAMEM_LEN+HOSTMEM_LEN); //读并校验
|
|
if(temp[AFE_MCU_LEN+PARAMEM_LEN+153] == CRC8_Cal(&temp[AFE_MCU_LEN+PARAMEM_LEN], 153))
|
|
{
|
|
memcpy(&VersionMem.host[0], &temp[AFE_MCU_LEN+PARAMEM_LEN], HOSTMEM_LEN);
|
|
}
|
|
#endif
|
|
{
|
|
return 0;
|
|
}
|
|
}
|
|
else
|
|
{
|
|
return 1;
|
|
}
|
|
}
|
|
|
|
//update flash to bmsMem
|
|
//校验Flash A/B的内容是否合规，A不合规就再校验B，都不合规则报错返回1
|
|
uint8_t FLASH_UpdateMemory(void)
|
|
{
|
|
if(FLASH_ReadCheck(FLASH_DATA_A_BASE) == 0) //read flash a success
|
|
{
|
|
return 0;
|
|
}
|
|
else //read flash a failed
|
|
{
|
|
if(FLASH_ReadCheck(FLASH_DATA_B_BASE) == 0) //read flash b success
|
|
{
|
|
return 0;
|
|
}
|
|
else
|
|
{
|
|
return 1;
|
|
}
|
|
}
|
|
}
|
|
|
|
//FLASH更新bmsMem，再更新AFE EEPROM
|
|
void uf_FLASH_Init(void)
|
|
{
|
|
if(FLASH_UpdateMemory() == 0)
|
|
{
|
|
staPack.bits.flashUpdate = 0;
|
|
if(MEMORY_UpdateAFE() == 0) //更新AFE EEPROM内容
|
|
{
|
|
staPack.bits.eepromUpdate = 0;
|
|
}
|
|
else
|
|
{
|
|
staPack.bits.eepromUpdate = 1;
|
|
}
|
|
}
|
|
else
|
|
{
|
|
staPack.bits.flashUpdate = 1;
|
|
}
|
|
|
|
bmsMem.packStatus = staPack.byte;
|
|
}
|
|
|
|
/**
|
|
* @brief 按WORD读取len长度数据
|
|
* @param addr: 读数据开始地址
|
|
* @param *data: 读数据存放地址
|
|
* @param len: 读数据长度
|
|
* @retval 无
|
|
*
|
|
*/
|
|
void FLASH_RdWord(uint32_t addr, uint32_t *data, uint16_t len)
|
|
{
|
|
uint16_t i;
|
|
|
|
for(i=0; i<len; i++)
|
|
{
|
|
data[i] = *(uint32_t *)(addr+i*4);
|
|
}
|
|
}
|
|
|